发明名称 |
Process for producing GaN related compound semiconductor |
摘要 |
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
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申请公布号 |
US2001018226(A1) |
申请公布日期 |
2001.08.30 |
申请号 |
US20010819622 |
申请日期 |
2001.03.29 |
申请人 |
UEMURA TOSHIYA;SHIBATA NAOKI;NOIRI SHIZUYO;MURAKAMI MASANORI;KOIDE YASUO;ITO JUN |
发明人 |
UEMURA TOSHIYA;SHIBATA NAOKI;NOIRI SHIZUYO;MURAKAMI MASANORI;KOIDE YASUO;ITO JUN |
分类号 |
H01L33/00;H01L33/32;H01L33/42;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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