| 摘要 |
In a semiconductor laser device, an active region includes alternating layers of at least one quantum well layer and a plurality of barrier layers, where two of the plurality of barrier layers are the outermost layers of the alternating layers, each of the at least one quantum well layer has a first thickness da and a compressive strain DELTAa, and each of the plurality of barrier layers has a second thickness db and a tensile strain DELTAb. In the active region, a strain buffer layer is formed between each quantum well layer and each of two barrier layers adjacent to the quantum well layer, where each strain buffer layer has a third thickness dr and an intermediate strain DELTAr which is between the compressive strain DELTAa and the tensile strain DELTAb. The first thickness da, the compressive strain DELTAa, the second thickness db, the tensile strain DELTAb, the third thickness dr, and the intermediate strain DELTAr satisfy a relationship, 0<=N.DELTAa.da+(N+1).DELTAb.db+2N.DELTAr.dr<=0.08 nm, where N is the number of the at least one quantum well layer.
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