METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method for manufacturing a semiconductor device for suppressing peeling of a layer becoming a mask material from a semiconductor substrate by obtaining the mask material of a desired size without changing a thickness of the material. CONSTITUTION: A polycrystal silicon film 2 and a tungsten silicide film 3 are formed on a silicon substrate 1. An insulating film to become a hard mask is formed on the film 3. A photoresist pattern 5 is formed on the insulating film. With the pattern 5 as a mask, the insulating film is anisotropically etched. A hard mask 4b is formed by etching the exposed side face of an insulating film 4a in a vapor phase hydrofluoric acid atmosphere.