Contact structure using barrier metal and method of manufacturing the same

摘要

A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a titanium nitride film by high-temperature lamp anneal. Further, a titanium nitride layer is stacked on the titanium nitride film based on producing conditions under which crystal orientation is constructed with (200) as principal. The crystal orientation of the stacked titanium nitride film is constructed with (200) as principal. According to the present invention, the crystal orientation of a plurality of titanium nitrides formed in a stack is constructed so that a granular crystal typified by (200) is taken as principal. It is therefore possible to improve a problem of a leakage current flowing into a contact. Further, barrier characteristics of the plurality of titanium--nitrides are not deteriorated even in the case of a subsequent high-temperature thermal treatment. The leakage current can be restrained from being generated in the contact and a failure in contact resistance can be restrained from occurring. It is therefore possible to realize a semiconductor device capable of providing high reliability and a method of manufacturing the semiconductor device. $$