发明名称 |
Multi-layered coaxial interconnect structure |
摘要 |
A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.
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申请公布号 |
US6281587(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000522148 |
申请日期 |
2000.03.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI TAKESHI;LOPATIN SERGEY;PRAMANICK SHEKHAR |
分类号 |
H01L21/768;(IPC1-7):H01L23/48;H01L21/476;H01L23/40;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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