发明名称 |
Laser programming of CMOS semiconductor devices using make-link structure |
摘要 |
A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.
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申请公布号 |
US6281563(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19970846949 |
申请日期 |
1997.04.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WILLS KENDALL SCOTT;RODRIGUEZ PAUL A. |
分类号 |
H01L21/8242;H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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