| 摘要 |
According to a semiconductor device manufacturing method, the surface of a silicon substrate is defined by an element isolation region, a gate oxide film and a polysilicon film are formed, and then a titanium nitride film is formed on the polysilicon film at a substrate temperature of 400° C. to 600° C. by collimate sputtering. A titanium silicide film is further formed on the titanium nitride film. A stacked film structure constituted by the titanium silicide film, titanium nitride film, and polysilicon film is patterned to form a gate electrode. After that, an LDD side wall is formed. Since the titanium nitride film is formed in this manner by collimate sputtering, a titanium nitride film, with which the breakdown voltage of the gate oxide film is not decreased and which has a high barrier performance, can be realized. When titanium polycide using a titanium nitride barrier is applied to a DRAM, low-resistance word lines can be formed, so that a DRAM having a high degree of integration can be obtained.
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