发明名称 |
Solid state imaging apparatus, and video system using such solid state imaging apparatus |
摘要 |
This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.
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申请公布号 |
US6281533(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19970933306 |
申请日期 |
1997.09.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIYAGAWA RYOHEI;YAMASHITA HIROFUMI;SASAKI MICHIO;OBA EIJI;TANAKA NAGATAKA;MABUCHI KEIJI |
分类号 |
H01L27/146;H04N5/335;H04N5/355;H04N5/361;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L31/062;H01L31/113 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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