| 摘要 |
PURPOSE: An FET for millimeter waves and a manufacturing method thereof are provided to have a ground effect even in frequency range of millimeter waves. CONSTITUTION: An active layer(23) is formed on a substrate(20) and has source and drain areas. Source, drain and gate electrodes are respectively formed on the source and drain areas and the active layer between the areas. A source metal pad(24) for electrically connecting the source is grounded through a via hole(26). A metal layer(25) is formed on both interior of the via hole and a rear surface of the substrate. A capacitor is serially connected to the via hole by etching the metal layer to separate it. It is preferable that the equivalent inductance due to the via hole and the capacitance of the capacitor are preset to generate serial resonance.
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