| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for programming a non-volatile semiconductor memory in which programming time can be shortened and the deterioration of the characteristics of a memory cell can be prevented. SOLUTION: When a command signal for starting a programming process is inputted, a high voltage generating circuit 60 is operated. Subsequently, after a high voltage of a level required by the high voltage generating circuit 60 is generated, a bit line setup operation, a programming operation, and the programming process of a verification operation are performed repeatedly.</p> |
