CONTACT ETCHING CONTAINING NO HYDROGEN FOR FORMING FERROELECTRIC CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming the conductive contact to a top electrode of a ferromagnetic capacitor which is composed of a bottom electrode positioned under the above top electrode and ferromagnetic material positioned between the above top electrode and the bottom electrode. SOLUTION: This contact etching method includes a step of forming one layer (408 or 312 in figure 4d) on a top electrode, a step of forming an opening (414 in figure 4d) in the above layer so as to expose one part of the above top electrode by etching the opening in the above layer, using an etchant containing no hydrogen, and a step of depositing conductive material (432 in figure 4d) within the above opening so as to form an electric connection with the top electrode.