| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal thin film, semiconductor device for suppressing short-channel effect in short gate length that can be achieved by a current manufacturing technology. SOLUTION: This single-crystal thin-film type semiconductor device is formed so that first conductivity type first and second heavily doped layers are buried into a semiconductor substrate while they are in contact with a first insulation film for the first insulation film that is formed of a first conductivity type first semiconductor layer, a first conductivity type first semiconductor layer, a second conductivity type second semiconductor layer and a second conductivity type third semiconductor layer that form semiconductor junction with the first semiconductor layer and are formed on the first insulation film so that they oppose each other while sandwiching the first semiconductor layer, the first heavily doped layer is located at the lower portion of the second semiconductor layer and the second heavily doped layer is located at the lower portion of the third semiconductor layer, and the first and second heavily doped layers are formed so that edge parts in a direction vertical to a lamination direction have a gap and the gap is located directly below the first semiconductor layer.
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