| 摘要 |
PROBLEM TO BE SOLVED: To prevent the drop of operation property of a semiconductor integrated circuit device, by reducing the parasitic of a MISFET made in the logic part of a logic-DRAM mixed LSI. SOLUTION: For the logic part of a logic-DRAM mixed LSI, a plurality of contact holes 11a-11c, which reach the n+-type semiconductor layer constituting a source, and a plurality of contact holes 11d-11f, which reach the n+-type semiconductor region constituting a drain, are opened in the insulating layer made on the gate electrode 5 of a MISFET. The n+-type semiconductor region constituting a source through the above plurality of contact holes 11a-11c is shunted by the conductive film BL1 in the same layer as a bit line, and the n+-type semiconductor region constituting a drain through the above plurality of contact holes 11d-11f is shunted by the conductive film BL2 in the same layer as a bit line. |
