发明名称 Defect inspection method and apparatus for silicon wafer
摘要 A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
申请公布号 US2001015802(A1) 申请公布日期 2001.08.23
申请号 US20010842929 申请日期 2001.04.27
申请人 TOMITA KOJI;MAESHIMA MUNEO;MATSUI SHIGERU;KODAMA YOSHITAKA;KOMURO HITOSHI;TAKEDA KAZUO 发明人 TOMITA KOJI;MAESHIMA MUNEO;MATSUI SHIGERU;KODAMA YOSHITAKA;KOMURO HITOSHI;TAKEDA KAZUO
分类号 G01N21/95;(IPC1-7):G01N21/88 主分类号 G01N21/95
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