发明名称 |
Method of compensating for pattern dimension variation caused by re-scattered electron beam in electron beam lithography |
摘要 |
The present invention relates to electron beam lithography, and is directed to a method of compensating for pattern dimension variation caused by a re-scattered electron beam when an electron beam resist is exposed to the electron beam. The method of compensating for pattern dimension variation caused by a re-scattered electron beam comprises the steps of: dividing original exposure pattens into square sections; obtaining a dose of supplemental exposure to the re-scattered electron beam; and compensation-exposing the electron beam resist so that the supplemental exposure dose may be the same for all sections. According to the present invention, the pattern dimension variation can be compensated for a re-scattering effect of the electron beam, thereby uniformly forming a fine pattern width of a more highly-integrated circuit.
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申请公布号 |
US2001016295(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20010758708 |
申请日期 |
2001.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JI-HYEON;KI WON-TAI |
分类号 |
G03F7/20;H01J37/317;H01L21/027;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F7/20 |
代理机构 |
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主权项 |
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地址 |
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