发明名称 |
Method of manufacturing a double-heterojunction bipolar transistor on III-V material |
摘要 |
The invention relates to a method of manufacturing a double heterojunction bipolar transistor (1) comprising successively at least one sub-collector layer, a collector layer, a base layer and a metallic layer (10) deposited on the said base layer; the said metallic layer (10) being extended towards a contact pad (110) of the base by an underetched metallic "air bridge" (100), characterized in that producing the said "air bridge" (100) includes the following steps: effecting a first localized etching under the said bridge, this first etching being selective so as to etch the sub-collector layer laterally; and effecting a second localized etching under the said bridge, this second etching being selective so as to vertically etch at least the collector layer.
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申请公布号 |
US2001015474(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20010781275 |
申请日期 |
2001.02.13 |
申请人 |
BLAYAC SYLVAIN;RIET MURIEL;BERDAGUER PHILIPPE |
发明人 |
BLAYAC SYLVAIN;RIET MURIEL;BERDAGUER PHILIPPE |
分类号 |
H01L21/331;H01L21/768;H01L23/522;H01L29/423;H01L29/737;(IPC1-7):H01L21/331;H01L21/822;H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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