发明名称 |
METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT |
摘要 |
A method intended for manufacturing an Si-SiC member for a semiconductor heat treatment and suited for heat treatment of a semiconductor wafer of a large diameter while minimizing the contamination of the semiconductor wafer. Further disclosed is a method for manufacturing an Si-SiC member for a semiconductor heat treatment, in which any slip occurs while minimizing the contamination of the semiconductor wafer. The method comprises a first step of kneading SiC powder having a total content of metal impurity of 0.2 ppm or less with a molding assistant, a second step of forming a molded piece from the kneaded material, a third step of calcinating the molded piece, a fourth step of purifying the calcinated body, and a fifth step of impregnating the purified body with silicon in a closed vessel disposed in a heating furnace.
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申请公布号 |
WO0160764(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
WO2000JP00840 |
申请日期 |
2000.02.15 |
申请人 |
TOSHIBA CERAMICS CO., LTD.;HORIUCHI, YUSHI;KUROI, SHIGEAKI |
发明人 |
HORIUCHI, YUSHI;KUROI, SHIGEAKI |
分类号 |
C04B35/573;C04B41/50;C04B41/52;C04B41/85;C04B41/89;H01L21/673;(IPC1-7):C04B41/85;C04B41/88;H01L21/205;C23C16/32 |
主分类号 |
C04B35/573 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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