| 摘要 |
PURPOSE: The third-fifth group nitride system semiconductor element is provided to effectively emit a heat generated in case of a semiconductor LD(Laser Diode) operation and an LED(Light Emitting Diode) operation by remedying an electrode structure of semiconductor LD and LED. CONSTITUTION: A nonconductor plate which is made from a sapphire has a penetration hole. A nitride layer is formed on the nonconductor plate. The first electrode contact layer is formed on the nitride layer. A sub-mount is located on one side face of the nonconductor plate. A solder is located between the penetration hole and the sub-mount, combines the penetration hole and the sub-mount, and plays a part of the second electrode contact layer. |
