| 摘要 |
A method of manufacturing a capacitor of a dynamic random access memory cell is disclosed. The method includes forming a capacitor opening through a dielectric isolation interlayer to expose a buried contact area. A conductive bottom plug is subsequently formed in a bottom portion of the capacitor opening and makes an electrical connection with the contact area. A conductive spacer is formed on the sidewall of the opening and then a dielectric spacer is formed on the sidewall of the conductive spacer. Such leaves a channel in the center of the capacitor opening. A conductive center column is therefore in the channel. Subsequently, the dielectric spacer is removed while leaving the conductive sidewall spacer, center column, and bottom plug to serve as a bottom storage node of the capacitor. Finally, a capacitor dielectric layer and a top storage node are formed to complete the capacitor fabrication.
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