PREVENTION OF VIA POISONING BY GLOW DISCHARGE INDUCED DESORPTION

摘要

A method of fabricating multilevel semiconductor wafers including a spin-on glass planarization layer is described. Prior to sputtering of the interconnect layer and after application of the spin-on glass layers the wafer is exposed to an intense glow discharge in such a way that it is bombarded in at least a partial vacuum with ions and/or electrons and/or photons while at a temperature that is between 400.degree.C and 550.degree.C and that is at least 25.degree.C highe r than the temperature to which the wafer is to be subjected during the subsequent sputtering step. In this way undesirable molecules can be desorbed from the spin-on glass layer so that they do not interfere with the subsequent sputtering step.