发明名称 |
Using a delta-doped CCD to determine the energy of a low-energy particle |
摘要 |
The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.
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申请公布号 |
US6278119(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
US19980176700 |
申请日期 |
1998.10.21 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
NIKZAD SHOULEH;CROLEY DONALD R.;MURPHY GERALD B. |
分类号 |
H01L27/148;(IPC1-7):G01T3/08;H01L31/035 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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