发明名称 Using a delta-doped CCD to determine the energy of a low-energy particle
摘要 The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.
申请公布号 US6278119(B1) 申请公布日期 2001.08.21
申请号 US19980176700 申请日期 1998.10.21
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 NIKZAD SHOULEH;CROLEY DONALD R.;MURPHY GERALD B.
分类号 H01L27/148;(IPC1-7):G01T3/08;H01L31/035 主分类号 H01L27/148
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