发明名称 |
CMP METHOD AND APPARATUS FOR PLANARIZATION |
摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) method and apparatus for planarization is provided to secure a stability of the CMP by completely preventing a slurry cohesion and deposition. CONSTITUTION: A holder(22) keeps to hold a wafer(30) and get circulated under the CMP method. A circulating unit(21) on which a grinder(21b) contacting the surface of the wafer is mounted get circulated to the opposite direction of the holder(22). A slurry supply unit(10) provides slurry which is mixed with an abradant to the surface of the wafer(30) by transferring the stored slurry to the circulating unit(21) through a pipe. A gas occurrence unit(14) provides an addition which keeps a gas state or a bubble state to the surface of the wafer(30) by transferring the addition to the circulating unit(21) through the pipe.
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申请公布号 |
KR100307487(B1) |
申请公布日期 |
2001.08.21 |
申请号 |
KR19970071948 |
申请日期 |
1997.12.22 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM, CHANG GYU;KIM, MYEON GYU |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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