发明名称 CMP METHOD AND APPARATUS FOR PLANARIZATION
摘要 PURPOSE: A CMP(Chemical Mechanical Polishing) method and apparatus for planarization is provided to secure a stability of the CMP by completely preventing a slurry cohesion and deposition. CONSTITUTION: A holder(22) keeps to hold a wafer(30) and get circulated under the CMP method. A circulating unit(21) on which a grinder(21b) contacting the surface of the wafer is mounted get circulated to the opposite direction of the holder(22). A slurry supply unit(10) provides slurry which is mixed with an abradant to the surface of the wafer(30) by transferring the stored slurry to the circulating unit(21) through a pipe. A gas occurrence unit(14) provides an addition which keeps a gas state or a bubble state to the surface of the wafer(30) by transferring the addition to the circulating unit(21) through the pipe.
申请公布号 KR100307487(B1) 申请公布日期 2001.08.21
申请号 KR19970071948 申请日期 1997.12.22
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 KIM, CHANG GYU;KIM, MYEON GYU
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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