Method of planarizing inter-metal dielectric layer

摘要

A method of forming a planarized inter-metal dielectric layer. The method involves completely filling the gaps of densely packed metal line regions with low dielectric constant organic dielectric layer but only partially filling the gaps of loosely packed metal line regions. A low dielectric constant inorganic dielectric layer having a high thermal conductivity is deposited over the organic dielectric layer next. The inorganic dielectric layer also fills the remaining space in the loosely packed metal line regions not yet covered by the organic dielectric layer.