| 摘要 |
PURPOSE: A charge-pump circuit is provided to realize high efficiency and provides a large output current, and assure the withstand voltage of a gate oxide film and realize optimum design of a charge transfer MOS transistor by setting the absolute value of the gate/source voltage Vgs of all the MOS transistors at 2 Vdd. CONSTITUTION: Two front-stag MOS transistor(M1,M2) for charge transmission are configured in a N-channel pattern, and two rear-stage MOS transistor(M3,M4) for charge transmission in a P-channel pattern. Also, there are mounted inverting level-shift circuits(S1,S2) enabling the output of an intermediate potential and non-inverting level-shift circuits(S3,S4). By way of these configurations, the charge-pump circuit having high efficiency and a large output current is materialized as well as an inter-gate/source voltage Vgs(transistors in ON-state) of the transistors(M1 to M4) for charge transmission is evened to 2Vdd.
|
