| 摘要 |
PURPOSE: A metallization process is provided to create line features that are void-free, have low resistivity, and greater effective line width. CONSTITUTION: The method of depositing a metal nitride film on a substrate comprises the steps of (a) injecting a mixture of a metal-containing compound, a nitrogen-containing gas, and a hydrogen-containing gas in a chamber; (b) generating a plasma from the mixture; and (c) depositing a metal nitride film on the substrate. The method of forming a feature on a substrate comprises (a) depositing a refractory metal layer over the surface of an aperture; (b) plasma-enhanced chemical vapor depositing a refractory metal nitride layer over the surface of the refractory metal layer; and (c) depositing a metal layer over the refractory metal nitride layer. The apparatus for providing improved step coverage and metallization of a semiconductor substrate comprises a) a load lock chamber (405), a plasma-enhanced chemical vapor deposition metal nitride chamber (406), and a metal processing chamber (407); b) an intermediate substrate transport region in communication with each chamber; c) a hydrogen gas source in communication with the metal nitride chamber; and d) a microprocessor controller (401) configured to deposit a metal nitride layer from a plasma comprising hydrogen.
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