BALLAST LAYER FOR FIELD EMISSION DEVICE

摘要

PURPOSE: A ballast layer for field emission device is provided to meet the resistance condition at the temperature range used. CONSTITUTION: A ballast layer for field emission device consists of a very thin layer of heavily doped nano-crystalline silicon and a layer of one or more properly doped amorphous silicon based material. The doped nano-crystalline silicon has thickness of 10-100nm. The layer of one or more properly doped amorphous silicon based material has total thickness in excess of 4 times thickness of the doped nano-crystalline silicon.