发明名称 SECONDARY ELECTRON AMPLIFICATION STRUCTURE APPLYING CARBON NANOTUBE AND PLASMA DISPLAY PANEL USING THE SAME
摘要 PURPOSE: A secondary electron amplification structure applying a carbon nanotube and a plasma display panel using the same are provided to be capable of maximizing secondary electron emission by stacking the carbon nanotube while realizing the merits of MgO layer. CONSTITUTION: The secondary electron amplification structure comprises a carbon nanotube(300) and MgO layer(400) stacked on the carbon nanotube(300). The structure is stacked on an electrode(2000) formed on a glass substrate(1000). The electrode(2000) is formed after a Cr layer(2100) is stacked on the glass substrate(1000) since the electrode(2000) isn't well deposited on the glass substrate. Further, fluoride such as MgF2, CaF2, LiF, or oxide such as Al2O3, ZnO, CaO, SrO, SiO2, La2O3 may be formed on the carbon nanotube(300) instead of the MgO layer(400). It is preferable that the electrode is formed of metal such as Cs, W, Mo, Ta, Fe, Cu, etc.
申请公布号 KR20010077686(A) 申请公布日期 2001.08.20
申请号 KR20000005648 申请日期 2000.02.07
申请人 SAMSUNG SDI CO., LTD. 发明人 CHOI, WON BONG;HAN, IN TAEK;LEE, JEONG HUI;LEE, WON TAE;YOO, SE GI
分类号 H01J1/32;H01J11/02;H01J11/22;H01J11/34;H01J11/36;H01J11/40;H01J11/42;H01J17/49;H01J65/00;(IPC1-7):H01J17/49 主分类号 H01J1/32
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