| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin and stable crystalline interface on a silicon substrate. SOLUTION: The forming method of a semiconductor structure is constituted of a stage that a silicon substrate 10 having the surface 12 is provided, a stage that an interface 14 consisting of a single silicon atomic layer, a single nitrogen atomic layer and a single metal atomic layer is formed on the surface of the substrate 10 and a stage that more than one layer of single crystal oxide layers 26 are formed on the interface. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer in the form of an MSiN2. Provided that, the M is a metal. In a second embodiment, the interface consists of an atomic layer containing the mixture of a silicon with a metal and the mixture of nitrogen with oxygen in the form of an MSi[N1-xOx]2. Provided that, the M is a metal and the (x) is used on the condition of 0<=x<1.
|
