| 摘要 |
PROBLEM TO BE SOLVED: To enhance the light transmittance of a resist layer and to enable microfabrication on a further minute level. SOLUTION: When a resist layer is patterned in a prescribed shape by selective exposure with X-rays, vacuum UV, extreme-ultraviolet radiation or soft X-rays, a high molecular material obtained by extending the π electron system of an aromatic ring in an aromatic ring-containing existing resist material is used as a high molecular material constituting the resist layer. The proportion of oxygen atoms to all the constituent atoms of the high molecular material is relatively reduced and the optical absorption of the entire high molecular material is suppressed. |
