METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to simplify a manufacturing process and to reduce manufacturing cost, by performing a process for forming an anti-reflecting layer by an in-situ process. CONSTITUTION: A metal layer is deposited on a semiconductor substrate(100), and is patterned to form a lower metal interconnection(102). An interlayer dielectric(104) is formed on the semiconductor substrate including the lower metal interconnection. The interlayer dielectric is etched to form a contact hole so that at least a part of the lower metal interconnection is exposed. A glue layer and a metal layer are sequentially deposited on the contact hole and the interlayer dielectric, and the metal layer is reflowed to form a contact. The metal layer on the contact is patterned to form an upper metal interconnection(114). An anti-reflecting layer(116) is conformally formed on the upper metal interconnection. The above-mentioned processes are performed in a common process space by an in-situ process.