| 摘要 |
PURPOSE: A process apparatus for CVD is provided to obtain a thin film on a uniform semiconductor substrate with a uniform deposition rate by adjusting a gap between a gas distribution plate and a pedestal of the semiconductor substrate. CONSTITUTION: A process apparatus leads reactant gases to react at a high temperature to deposit a thin film on the surface of a semiconductor substrate(102), and includes a gas mixing chamber(110), gas distribution plates(112,114) and a pedestal(104). The gas mixing chamber(110) receives the reactant gases to be mixed. The gas distribution plates(112,114) are placed under the gas mixing chamber(110) for allowing uniform distribution of the reactant gases on the semiconductor substrate(102). The pedestal(104) is distanced from the gas distribution plates(112,114) under the same, and loads the semiconductor substrate(102) on one side thereof for transmitting heat from an internally installed heater(108) to the semiconductor substrate(102) for suitable process conditions.
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