| 摘要 |
PURPOSE: A method for forming a metal interconnect line of a semiconductor device is provided to form a barrier metal film for suppressing an interaction and a diffusion on a semiconductor substrate or in a contact hole easily without regard to an aspect ratio of the contact hole between a bottom metal interconnect line and a top metal interconnect line. CONSTITUTION: An interlayer insulation film(22) is formed on a semiconductor substrate(21). After coating a photo resist on the interlayer insulation film, a contact region is defined by patterning the photo resist. And a contact hole is formed by removing the interlayer insulation film selectively to reveal a part of a surface of the semiconductor substrate using the patterned photo resist as a mask. A barrier metal film(25) is grown on the semiconductor substrate in the contact hole by a selective chemical vapor deposition method. And a metal plug(26) is formed on the barrier metal film by a selective chemical vapor deposition method on the semiconductor substrate where the barrier metal film is formed. And a metallic film having a low resistivity is deposited on the substrate by a physical vapor deposition method, and a metal interconnect line(27) connected with the semiconductor substrate electrically through the metal plug by removing the metal film selectively through a photo lithography and etching process.
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