| 摘要 |
PROBLEM TO BE SOLVED: To prevent a buffer coating film from wearing off and its surface from being damaged in a dry etching process in which the buffer coating film is used as a mask. SOLUTION: An insulating film 3, a metal wiring 5, a PSG film 7, and a positive photosensitive polybenzoxazole precursor 11 are sequentially formed (A), and furthermore a positive photosensitive resist 15 which can be developed with a developing solution common to the precursor 11 is formed thereon (B). The resist 15 and the precursor 11 are exposed to light for the formation of photodissociated regions 11b and 15b (C), the photodissociated regions 11b and 15b are removed by the use of a developing solution to form openings 11a and 15a (D), a silicon nitride film 9 is patterned through a dry etching method for the formation of an opening 9a, and the resist 15 is removed (E). The precursor 11 is cured into a polybenzoxazole film 11c, and then the PSG film 7 is patterned to form an opening 7a (F). |
