发明名称 |
CAPACITOR USED IN SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a capacitor structure for avoiding disadvantages of a structure and a manufacturing process of a conventional technique and to provide a manufacturing method thereof. SOLUTION: The capacitor of the present invention that is used in a semiconductor device comprises a first capacitor electrode 164 including a part of a damascene interconnect structure, an insulating layer 166 which is formed on the damascene interconnect structure and acts as a passivation layer, and a second capacitor electrode 168 including a conductive layer formed at least on a part of the insulating layer. The semiconductor device includes the damascene interconnect structure formed on a substrate of a semiconductor wafer.</p> |
申请公布号 |
JP2001223339(A) |
申请公布日期 |
2001.08.17 |
申请号 |
JP20010011599 |
申请日期 |
2001.01.19 |
申请人 |
LUCENT TECHNOL INC |
发明人 |
DOWNEY STEPHEN WARD;EDWARD BELDEN HARRIS;MERCHANT SAILESH MANSINH |
分类号 |
H01L27/04;H01L21/02;H01L21/768;H01L21/822;H01L21/8238;H01L27/06;H01L27/092;H01L27/108;(IPC1-7):H01L27/04;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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