发明名称 METHOD OF REDUCING THICKNESS OF SEMICONDUCTOR WAFER AND DEVICE FOR GLIDING BACK FACE OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To enhance the quality and reliability of a semiconductor device by eliminating the contamin of the wafer surface. SOLUTION: A protective tape 12 is pasted on the surface of a wafer 11, and the back of the wafer 11 is ground and etched, where the outer diameter W of the wafer 11 and the other diameter L of the protective tape 12 are so set as to satisfy a formula, L=W-a, (0 mm<=a<=3 mm). In this way, the outer diameter of the protective tape 12 is set smaller than that of the wafer, by which chemicals are mode to drop down without staying on the protective film 12, and the chemicals are prevented from reaching the surface of the wafer W to contaminate it. The difference in the diameters L and W is set smaller than 3 mm, and the wafer is restrained from vibrating during a grinding operation so as to enable its back to be stably ground. Thus, a semiconductor device can be improved in quality and reliability.
申请公布号 JP2001223202(A) 申请公布日期 2001.08.17
申请号 JP20000236894 申请日期 2000.08.04
申请人 SHARP CORP 发明人 IWASAKI NORIKI;FUKUNAGA SATORU;INDO TADAYUKI
分类号 H01L21/306;H01L21/302;H01L21/304;H01L21/68;(IPC1-7):H01L21/306 主分类号 H01L21/306
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