发明名称 |
LEAD FRAME STRUCTURE FOR THE FABRICATION OF HYBRID SEMICONDUCTOR DEVICES |
摘要 |
<p>Two phase bridge rectifier, plastic encapsulated devices having four external terminal leads are batch fabricated using a workpiece of three stacked together lead frames wherein, at each of a plurality of device sites on the workpiece, two, two-chip stacks of semiconductor diode chips are provided; each chip of each stack being sandwiched between respective pairs of bonding pads on either top and middle lead frames or middle and bottom lead frames. Each of the two bonding pads of the middle frame is connected to a respective integral terminal lead of the middle frame. An integral extension of a bonding pad of each of the top and bottom lead frames is bent out of the plane of its respective lead frame to include a flat terminal lead portion lying in the plane of the middle frame but not connected thereto. All four in-plane terminal leads include dam bars for use during device encapsulating; the dam bars from the top and bottom lead frames cooperating to form a single, in-plane dam bar. After encapsulation, individual devices are separated from the lead frame workpiece by severing ends of the four terminal leads from their respective lead frames.</p> |
申请公布号 |
EP1123564(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
EP20000957675 |
申请日期 |
2000.08.23 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
O'BRIEN, TADHGH;GUILLOT, MARIE;O'DONOGHUE, FINBARR;MCAULIFFE, OWEN |
分类号 |
H01L23/495;(IPC1-7):H01L23/495 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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