发明名称 |
Multilayered Substrate for Semiconductor Device |
摘要 |
A substrate of multilayered structure having a plurality of sets of an insulation layer and a wiring line layer, and having one face for mounting a semiconductor element thereon and the other face on which external connection terminals are to be provided, the face for mounting a semiconductor element being provided with pads to be bonded to an electrode terminal of the semiconductor element, the other face being provided with pads to be bonded to an external connection terminal, such as a terminal formed of a solder ball, and the wiring line layers on both sides of an insulation layer being connected with each other by vias piercing the insulation layer, wherein the surfaces of the pads to be bonded to an electrode terminal of a semiconductor element are flat and are in the same plane. A method of manufacturing such a multilayered substrate is also disclosed.
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申请公布号 |
US2001013425(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
US20010815047 |
申请日期 |
2001.03.23 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
ROKUGAWA AKIO;SASAKI MASAYUKI;MATSUDA YUICHI |
分类号 |
H01L23/12;H01L23/498;H05K1/11;H05K3/00;H05K3/04;H05K3/10;H05K3/20;H05K3/38;H05K3/46;(IPC1-7):H05K1/11 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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