发明名称 DUAL TOX TRENCH DRAM STRUCTURES AND PROCESS USING V-GROOVE
摘要 A structure and method for simultaneously forming array structures and support structures on a substrate comprises forming the array structures to have a V-groove, forming the support structures to have a planar surface, and simultaneously forming a first oxide in the V-groove and a second oxide in the planar surface, wherein the first oxide is thicker than the second oxide.
申请公布号 US2001014481(A1) 申请公布日期 2001.08.16
申请号 US19990225127 申请日期 1999.01.04
申请人 FURUKAWA TOSHIHARU;GAMBINO JEFFREY P.;KIEWRA EDWARD W.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM R.;WEYBRIGHT MARY E. 发明人 FURUKAWA TOSHIHARU;GAMBINO JEFFREY P.;KIEWRA EDWARD W.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM R.;WEYBRIGHT MARY E.
分类号 H01L21/8242;H01L27/108;(IPC1-7):H01L21/00 主分类号 H01L21/8242
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