发明名称 |
DUAL TOX TRENCH DRAM STRUCTURES AND PROCESS USING V-GROOVE |
摘要 |
A structure and method for simultaneously forming array structures and support structures on a substrate comprises forming the array structures to have a V-groove, forming the support structures to have a planar surface, and simultaneously forming a first oxide in the V-groove and a second oxide in the planar surface, wherein the first oxide is thicker than the second oxide.
|
申请公布号 |
US2001014481(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
US19990225127 |
申请日期 |
1999.01.04 |
申请人 |
FURUKAWA TOSHIHARU;GAMBINO JEFFREY P.;KIEWRA EDWARD W.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM R.;WEYBRIGHT MARY E. |
发明人 |
FURUKAWA TOSHIHARU;GAMBINO JEFFREY P.;KIEWRA EDWARD W.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM R.;WEYBRIGHT MARY E. |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|