| 发明名称 |
MAGNETIC SENSOR AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
<p>An InxGa1-xAsySb1-y (0 < x </= 1, 0 </= y </= 1) thin film of an electron concentration of 2 X 10<16>/cm<3> or more is formed on a dielectric substrate. Temperature dependence of resistance is controlled by composition setting or donor atom doping of the thin film to reduce the temperature dependence. As a result, a magnetic sensor of small temperature dependence of device resistance and high sensitivity can be provided. <IMAGE></p> |
| 申请公布号 |
EP1124271(A1) |
申请公布日期 |
2001.08.16 |
| 申请号 |
EP19990935099 |
申请日期 |
1999.08.06 |
| 申请人 |
ASAHI KASEI KABUSHIKI KAISHA |
发明人 |
SHIBASAKI, ICHIRO;OKAMOTO, ATSUSHI;YOSHIDA, TAKASHI;OKADA, ICHIRO |
| 分类号 |
G01R33/06;G01R33/09;H01L43/10;(IPC1-7):G01R33/06;G01R33/07;H01L43/06 |
主分类号 |
G01R33/06 |
| 代理机构 |
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