| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser beam etching method and a laser beam etching apparatus capable of etching without adhering a byproduct around an etching position and finely etching a material of IC, diode device, etc., when etching an object to be worked of an inorganic material. SOLUTION: Relating to a laser beam etching method and an apparatus therefor in which optical aberration working is conducted by irradiating an object to be worked of an organic material with a laser beam emitted from a femto-second laser beam, when the laser beam emitted from the laser beam oscillator is made to have a prescribed pattern and a prescribed energy density, and the object to be worked is laser beam etched, etching is conducted so as not to adhere an etching byproduct around an etching position.</p> |
