ZnSe SUBSTRATE, METHOD FOR HEAT-TREATING THE SAME AND METHOD FOR PRODUCING ZnSe-BASED THIN FILM AND LUMINESCENT ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a ZnSe substrate for vapor phase epitaxial growth having <500 cm2 dislocation density in the substrate and capable of suppressing occur rence of deposition while utilizing excellent crystallinity, a method for heat- treating the substrate, a method for producing epitaxial thin film using the substrate and a luminescent element using the thin film. SOLUTION: This ZnSe substrate for vapor phase epitaxial growth is characterized in that the dislocation density is <500 cm-1 and the carrier density is within the range of 5×1016 to 5×1017. This method for heat-treating the substrate, this method for subjecting the ZnSe-based crystal thin film to epitaxial growth on the substrate and this luminescent element using the thin film are provided.