发明名称 |
Etching method for doped polysilicon layer |
摘要 |
A method for etching a doped polysilicon layer. A first doped polysilicon layer of a first conductive type and a second doped polysilicon layer of a second conductive type are formed. An etching process is performed to pattern the first doped polysilicon layer and the second doped polysilicon layer. The etching process includes a first main etching step and a second main etching step. The etching pressure of the first main etching step is lower than the etching pressure of the second main etching step.
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申请公布号 |
US6274503(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US19990241757 |
申请日期 |
1999.02.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSIEH CHI-KUO |
分类号 |
H01L21/3213;H01L21/8238;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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