发明名称 |
Ferroelectric voltage boost circuits |
摘要 |
A boost circuit for a ferroelectric memory operated in a low voltage supply environment is achieved by floating a local supply voltage and using a single boost via one or more appropriately sized ferroelectric boost capacitors to elevate the local supply level to the desired boosted voltage. When boosting is not required, the local supply voltage is tied to the system external power supply through an appropriately sized PMOS transistor.
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申请公布号 |
US6275425(B1) |
申请公布日期 |
2001.08.14 |
申请号 |
US20000714879 |
申请日期 |
2000.11.16 |
申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
ELIASON JARROD |
分类号 |
G11C5/14;G11C11/22;(IPC1-7):G11C7/12 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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