发明名称 Four transistor SRAM cell with improved read access
摘要 A memory cell comprises first and second output nodes, a first transistor coupled between a first power supply node and the first output node, a first load coupled between the first output node and a second power supply node, a second load coupled between the first power supply node and the second output node, and a second transistor coupled between the second output node and the second power supply node. A gate terminal of the first transistor is coupled to the second output node, and a gate terminal of the second transistor is coupled to the first output node.
申请公布号 US6275433(B1) 申请公布日期 2001.08.14
申请号 US20000651632 申请日期 2000.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD
分类号 G11C11/412;(IPC1-7):G11C7/00 主分类号 G11C11/412
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