| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device together with its manufacturing method wherein no distortion or poor connection takes place under heat or external force, resulting in good yield of products. SOLUTION: A through hole 9 which connects a wiring part 5 to an electrode 6 through a bas material 1 and an adhesive layer 3 is provided on the base material side. The through hole 9 is filled with a conductive material 10 so that the wiring part 5 on the base material 1 is connected to the electrode 6 on a semiconductor chip 2. Thus, no operation such as soldering which requires a high-temperature atmosphere and a strong pressurizing force is required for a manufacturing process. So dimensional change or displacement under thermal expansion, or, distortion or damage such as deformation under pressurizing force is prevented, resulting in a high-quality semiconductor device at an efficient yield.</p> |
