| 摘要 |
The invention concerns a method for providing high resolution and high dependability ion projecting lithography which consists in combining the use of highly decelerated ions and a multilayer active reticle, adapted to reflect selectively said ions in accordance with potentials applied to different layers or parts of layers. In one embodiment, the reticle (40) comprises, on a molten quartz substrate (400), a surface conductive layer (404), a subjacent conductive layer (402) and an insulating layer (403) arranged between the two conductive layers. The surface layer (404) an the insulating layer are etched beforehand with patterns (4A, 4B, 4C) to be exposed. The subjacent layer (402) is brought to a potential level (V1) capable of neutralising the incident beam (F2) and the surface layer (404) to a potential level (V2) capable of backscattering the insolation beam (F3). |
