IMPROVED INTEGRATED OPTICAL DEVICE

摘要

There is disclosed an improved integrated optical device (5a-5g) providing first and second devices (10a-10g; 15a, 15e), optically coupled one to the other and formed in first and second different material systems, one of the first or second devices (10a-10g, 15a, 15e) having a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first a nd second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material system may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbo3), a polymer, or glass.