| 发明名称 |
Semiconductor device and its manufacturing method |
| 摘要 |
A film containing such an element as germanium or tin is formed on a wiring electrode mainly made of aluminum. A wiring film to take contact to the wiring electrode is further formed thereon. The film containing the above element is rendered flowable by performing a heat treatment. This process allows formation of a reliable contact.
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| 申请公布号 |
US2001011727(A1) |
申请公布日期 |
2001.08.09 |
| 申请号 |
US20010814255 |
申请日期 |
2001.03.21 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;TERAMOTO SATOSHI |
| 分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L29/04;H01L23/48 |
主分类号 |
H01L21/768 |
| 代理机构 |
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| 主权项 |
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