SEMICONDUCTOR DIODE LASERS WITH IMPROVED BEAM DIVERGENCE PRIORITY

摘要

A semiconductor diode laser has a characteristic output with a single mode vertical farfield divergence. The semiconductor diode laser includes a waveguide (103) with a first refractive index and a quantum well (104) embedded in the center of the waveguide. On one side of the waveguide (103) sits a p-type cladding layer (105) with a second refractive index smaller than the first refractive index. On the other side of the waveguide (103) sits an n-type cladding layer (102) with a third refractive index smaller than the first refractive index and larger than the second refractive index.