发明名称 |
Method of manufacturing thin film transistor |
摘要 |
The present invention discloses a method of manufacturing a thin film transistor, including: preparing a process chamber having a stage; providing a substrate on the stage of the process chamber; injecting a first mixed gas of NH3, N2 and SiH4 into the process chamber; forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate; injecting a second mixed gas of H2 and SiH4 into the process chamber while removing the first mixed gas in the plasma state; forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas; injecting a third mixed gas of H2, SiH4 and PH3 into the process chamber while removing the second mixed gas in the plasma state; and forming a doped amorphous silicon film (n+a-Si:H) on the silicon nitride film using the second mixed gas.
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申请公布号 |
US2001012650(A1) |
申请公布日期 |
2001.08.09 |
申请号 |
US20000736308 |
申请日期 |
2000.12.15 |
申请人 |
KIM CHEOL-SE;KIM DONG-HEE;LEE MYEUNG-KYU |
发明人 |
KIM CHEOL-SE;KIM DONG-HEE;LEE MYEUNG-KYU |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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